?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b hgt1n40N60A4D 600v, smps series n-channel igbt with anti-parallel hyperfast diode the hgt1n40N60A4D is a mos gated high voltage switching device combining the best features of a mosfet and a bipolar transistor. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. this igbt is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. this device has been optimized for high frequency switch mode power supplies. formerly developmental type ta49349. features 100khz operation at 390v, 22a 600v switching soa capability typical fall time . . . . . . . . . . . . . . . . . 55ns at t j = 125 o c low conduction loss symbol packaging jedec style sot-227b ordering information part number package brand hgt1n40N60A4D sot-227 40N60A4D note: when ordering, use the entire part number. c e g gate collector emitter emitter tab (isolated) fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001 free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b absolute maximum ratings t c = 25 o c, unless otherwise noted hgt1n40N60A4D units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 110 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 45 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 300 a gate to emitter voltage continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c, figure 2 . . . . . . . . . . . . . . . . . . . . . . . . ssoa 200a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 298 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 w/ o c rms isolation voltage, any terminal to case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .v isol 2500 v operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c baseplate screw torque 4mm metric screw size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 n-m terminal screw torque 4mm metric screw size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 n-m caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. pulse width limited by maximum junction temperature. electrical speci?ations t j = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = bv ces t j = 25 o c - - 250 a t j = 125 o c - - 3.0 ma collector to emitter saturation voltage v ce(sat) i c = 40a, v ge = 15v t j = 25 o c - 1.7 2.7 v t j = 125 o c - 1.5 2.0 v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 4.5 5.6 7 v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 2.2 ?, v ge = 15v l = 100 h, v ce = 600v 200 - - a gate to emitter plateau voltage v gep i c = 40a, v ce = 0.5 bv ces - 8.5 - v on-state gate charge q g(on) i c = 40a, v ce = 0.5 bv ces v ge = 15v - 350 405 nc v ge = 20v - 450 520 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 40a v ce = 0.65 bv ces v ge =15v r g = 2.2 ? l = 200 h test circuit (figure 24) -25 - ns current rise time t ri -18 - ns current turn-off delay time t d(off)i - 145 - ns current fall time t fi -35 - ns turn-on energy (note 3) e on1 - 400 - j turn-on energy (note 3) e on2 - 850 - j turn-off energy (note 2) e off - 370 - j current turn-on delay time t d(on)i igbt and diode at t j = 125 o c i ce = 40a v ce = 0.65 bv ces v ge = 15v r g = 2.2 ? l = 200 h test circuit (figure 24) -27 - ns current rise time t ri -20 - ns current turn-off delay time t d(off)i - 185 225 ns current fall time t fi -5595ns turn-on energy (note3) e on1 - 400 - j turn-on energy (note 3) e on2 - 1220 1400 j turn-off energy (note 2) e off - 660 775 j diode forward voltage v ec i ec = 40a - 2.25 2.7 v hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b diode reverse recovery time t rr i ec = 40a, di ec /dt = 200a/ s - 48 55 ns thermal resistance junction to case r jc igbt - - 0.42 o c/w diode - - 1.8 o c/w notes: 2. turn-off energy loss (e off ) is de?ed as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. 3. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is speci?d in figure 20. typical performance curves (unless otherwise speci?d) figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time electrical speci?ations t j = 25 o c, unless otherwise speci?d (continued) parameter symbol test conditions min typ max units t c , case temperature ( o c) i ce , dc collector current (a) 0 40 20 25 75 100 125 150 80 60 100 120 v ge = 15v t j = 150 o c 50 v ce , collector to emitter voltage (v) 700 100 0 i ce , collector to emitter current (a) 25 50 300 400 200 100 500 600 0 125 150 75 175 200 225 t j = 150 o c, r g = 2.2 ? , v ge = 15v, l = 100 h 10 1 10 20 100 i ce , collector to emitter current (a) f max , operating frequency (khz) f max1 = 0.05 / (t d(off)i + t d(on)i ) r jc = 0.42 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c v ge 15v 75 o c 100 300 v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time (ms) 10 11 12 15 2 10 200 1200 t sc i sc 12 1000 13 14 4 6 8 400 600 800 16 v ce = 390v, r g = 2.2 ? , t j = 125 o c hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current typical performance curves (unless otherwise speci?d) (continued) 0 0.25 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 0.5 0.75 1.0 40 50 30 60 pulse duration = 250ms duty cycle < 0.5%, v ge = 12v 70 80 1.25 1.75 1.5 2.0 2.25 2.5 t j = 150 o c t j = 125 o c t j = 25 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) duty cycle < 0.5%, v ge = 15v pulse duration = 250ms t j = 150 o c t j = 25 o c t j = 125 o c 0 0.25 0.5 0.75 1.0 1.25 1.75 1.5 2.0 2.25 2.5 10 20 40 50 30 60 70 80 0 e on2 , turn-on energy loss (mj) 2500 1500 i ce , collector to emitter current (a) 2000 1000 500 3000 0 t j = 25 o c, v ge = 12v, v ge = 15v t j = 125 o c, v ge = 12v, v ge = 15v r g = 2.2 ? , l = 200mh, v ce = 390v 4000 3500 4500 5000 10 0 30405060 20 70 80 5500 1200 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 0 200 800 400 1000 1400 1600 600 10 0 30405060 20 70 80 t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v 1800 r g = 2.2 ? , l = 200mh, v ce = 390v i ce , collector to emitter current (a) t d(on)i , turn-on delay time (ns) 22 24 26 28 30 32 r g = 2.2 ? , l = 200mh, v ce = 390v t j = 25 o c, t j = 125 o c, v ge = 15v 20 10 0 40506070 30 80 34 36 38 40 42 t j = 25 o c, t j = 125 o c, v ge = 15v i ce , collector to emitter current (a) t ri , rise time (ns) 0 40 20 20 10 0 40506070 30 80 60 120 100 80 r g = 2.2 ? , l = 200mh, v ce = 390v t j = 125 o c, t j = 25 o c, v ge = 12v t j = 25 o c, t j = 125 o c, v ge = 15v hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms figure 15. total switching loss vs case temperature figure 16. total switching loss vs gate resistance typical performance curves (unless otherwise speci?d) (continued) 10 30 0 150 20 130 140 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 50 190 70 60 170 180 40 160 80 v ge = 12v, v ge = 15v, t j = 125 o c v ge = 12v or 15v, t j = 25 o c r g = 2.2 ? , l = 200mh, v ce = 390v i ce , collector to emitter current (a) t fi , fall time (ns) 35 30 45 40 10 30 020 5070 60 40 80 55 50 65 60 70 t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v r g = 2.2 ? , l = 200mh, v ce = 390v i ce , collector to emitter current (a) 0 50 100 78910 v ge , gate to emitter voltage (v) 11 150 200 250 6 300 350 400 pulse duration = 250ms duty cycle < 0.5%, v ce = 10v t j = 25 o c t j = -55 o c t j = 125 o c v ge , gate to emitter voltage (v) q g , gate charge (nc) 2 14 0 0 100 50 150 4 10 200 250 300 350 400 6 8 12 16 v ce = 200v v ce = 400v v ce = 600v i g(ref) = 1ma, r l = 7.5 ? , t c = 25 o c 0 1 2 50 75 100 t c , case temperature ( o c) 3 5 125 25 150 4 e total , total switching energy loss (mj) i ce = 80a i ce = 20a i ce = 40a t j = 125 o c, v ce = 390v, v ge = 15v e total = e on2 +e off 0.1 10 100 r g , gate resistance ( ? ) 1 10 1 500 e total , total switching energy loss (mj) i ce = 80a i ce = 40a i ce = 20a 70 e total = e on2 +e off t j = 125 o c, v ce = 390v, v ge = 15v hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b figure 17. capacitance vs collector to emitter voltage figure 18. collector to emitter on-state voltage vs gate to emitter voltage figure 19. diode forward current vs forward voltage drop figure 20. recovery times vs forward current figure 21. recovery times vs rate of change of current figure 22. stored charge vs rate of change of current typical performance curves (unless otherwise speci?d) (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) c res 0 1020304050 0 2 4 8 10 12 6 c oes c ies 60 70 80 90 100 frequency = 1mhz 14 v ge , gate to emitter voltage (v) 89 1.9 10 12 2.0 2.2 2.1 11 13 14 15 16 2.3 2.4 v ce , collector to emitter voltage (v) i ce = 80a i ce = 40a i ce = 20a duty cycle < 0.5%, v ge = 15v pulse duration = 250ms, t j = 25 o c 0.5 1.0 1.5 2.5 i ec , forward current (a) v ec , forward voltage (v) 0 2.0 5 0 20 30 40 50 10 15 25 35 45 pulse duration = 250ms duty cycle < 0.5%, t j = 125 o c t j = 25 o c 60 40 20 0 t rr , recovery times (ns) i ec , forward current (a) 040 35 25 80 50 30 10 5101520 30 100 120 125 o c t a 25 o c t b 25 o c t a 125 o c t b 110 90 70 di ec /dt = 200a/ s 125 o c t rr 25 o c t rr 300 400 500 700 800 t rr , recovery times (ns) di ec /dt, rate of change of current (a/ s) 200 600 15 10 30 40 50 60 20 25 35 45 55 65 70 900 1000 125 o c t a 125 o c t b 25 o c t b i f = 40a, v ce = 390v 25 o c t a 800 400 0 q rr , reverse recovery charge (nc) di ec /dt, rate of change of current (a/ s) 1000 1200 1000 600 200 200 400 1400 600 800 v ce = 390v 125 o c, i f = 20a 125 o c, i f = 40a 25 o c, i f = 40a 25 o c, i f = 20a hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b figure 23. capacitance vs collector to emitter voltage test circuit and waveforms figure 24. inductive switching test circuit figure 25. switching test waveforms typical performance curves (unless otherwise speci?d) (continued) t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.10 0.20 0.05 0.02 0.01 0.50 r g = 2.2 ? l = 100 h v dd = 390v + - hgt1n40N60A4D hgt1n40N60A4D t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?ccosorbd ld26 or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or ?ating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a speci? application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ed by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other de?itions are possible. t d(off)i and t d(on)i are de?ed in figure 21. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is de?ed by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is de?ed by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c = (v ce x i ce )/2. e on2 and e off are de?ed in the switching waveforms shown in figure 21. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce x v ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgt1n40N60A4D free datasheet http:///
?001 fairchild semiconductor corporation hgt1n40N60A4D rev. b hgt1n40N60A4D sot-227b isotop package o a b c r3.97 d s e f g h i j k p m n l q o r symbol inches millimeters notes min max min max a 1.240 1.255 31.50 31.88 - b 0.310 0.322 7.87 8.18 - c 0.163 0.169 4.14 4.29 - d 0.163 0.169 4.14 4.29 - e 0.165 0.169 4.19 4.29 - f 0.588 0.594 14.99 15.09 - g 1.186 1.192 30.12 30.28 - h 1.494 1.504 37.95 38.20 - i 0.976 0.986 24.79 25.04 - j 0.472 0.480 11.99 12.19 - k 0.372 0.378 9.45 9.60 - l 0.030 0.033 0.76 0.84 - m 0.495 0.506 12.57 12.85 - n 0.990 1.000 25.15 25.40 - o 0.080 0.084 2.03 2.13 - p 0.108 0.124 2.74 3.15 - q 1.049 1.059 26.64 26.90 - r 0.164 0.174 4.16 4.42 - s 0.186 0.191 4.72 4.85 - rev. 0 8/00 free datasheet http:///
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx? free datasheet http:///
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